To allow 32-nm generation high-k metal gate stacks using a single metal, instead of the two different metals required previously for CMOS, semiconductor manufacturing equipment maker ASM America Inc, ...
NEC Corporation and NEC Electronics Corporation announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), ...
Applied Materials has launched a system for creating the critical gate dielectric structures in 22nm logic chips. According to the technology specialist, the Applied Centura integrated gate stack ...
Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric ...
At the IEEE International Electron Devices Meeting (IEDM) in San Franciso, IBM, Intel and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) this week will separately present the latest details of ...
Intel and Micron’s 64Gb, 20nm NAND flash? Old news. It’s now in mass production. Today, Micron revealed the two companies’ hottest new collaboration, a 128Gb, 20nm NAND flash device. The little thing ...
Intel is now shipping its next-generation client/consumer SSDs, the Intel SSD 335 series, which are built using 20nm NAND flash memory, which Intel developed in tandem with IM Flash Technologies. The ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback