STARLight, selected by the European Commission under the EU CHIPS Joint Undertaking, aims to develop application-driven ...
In years gone by, the performance figures for nitride-based LEDs operating in the deep-UV fell far short of those emitting in ...
Rohm and Infineon have signed an agreement to collaborate on packages for SiC power semiconductors used in applications such ...
MIT researchers with colleagues from the University of Chemistry and Technology in Prague have used 2D CrSBr, a van der Waals ...
Today’s GaN power devices are well-established, generating significant sales in consumer electronics. They are widely ...
Due to these severe concerns, it is critical to enhance the irradiation hardness of GaN power devices to single-event burnout. Unfortunately, that’s not a straightforward task, as irradiation ...
Taiwan's Industrial Technology Research Institute (ITRI) and the UK's National Physical Laboratory (NPL) have signed a ...
Our experience shows that working as a group has stronger impact and is more efficient for all parties. So, if a delegation ...
Schematic cross-section of the first (left) and second (right) generation HEMTs studied at CRHEA. Recently, due to its wide ...
UMEC’s 250 W adapter offers efficiency of 95 percent, a power density increase of around 39 percent. The CoolGaN transistors ...
Buoyed by the emergence of Vishay Intertechnology within the South Wales compound semiconductor cluster, Swansea University’s recently constructed Centre for Integrative Semiconductor Materials (CISM) ...
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