Abstract: A 512-Mb DDR-II SDRAM has achieved 700-Mb/s/pin operation at 1.8-V supply voltage with 0.12-/spl mu/m DRAM process. The low supply voltage presents challenges in high data rate and signal ...
Abstract: Recently, there has been a strong drive to replace established analog circuits for multi-gigabit clock and data recovery (CDR) by more digital solutions. We focused on phase locked ...
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